Gallium Arsenide (GaAs)

Semiconductor

Description

Gallium Arsenide (GaAs) is a III-V semiconductor with a bandgap of 1.4 eV and the ability to achieve negative electron affinity (after activation). These properties make it an attractive choice for a variety of detectors and the production of high-brightness electron beams. GaAs photocathodes are known for their high quantum efficiency and low mean transverse energy. However, they tend to be sensitive to vacuum conditions, which can affect their performance. Negative electron affinity can be achieved through several activation techniques, such as the deposition of a monolayer of Cesium (Cs) on the surface, or through the alternate application of Cs and one of Oxygen (O) or Nitrogen Trifluoride (NF3) commonly referred to as the Yo-Yo activation method.

Photoemission Properties (Cs-NF3)

A figure with lines showing the MTE of the photocathode GaAs

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1	Thermal emittance measurements for electron beams…	↓
2	Thermal emittance measurements for electron beams…	↓
3	Transverse energy spread of photoelectrons emitte…	↓

Photoemission Properties (Clean Surface)

A figure with lines showing the QE of the photocathode GaAs

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1	Photoelectric Properties of Cleaved GaAs, GaSb, I…	↓
2	Negative affinity 3–5 photocathodes: Their physic…	↓

Photoemission Properties (GaAs-GaAsP Superlattice)

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1	Thermal emittance measurements for electron beams…	↓

Photoemission Properties (Strained)

A figure with lines showing the Polarization of the photocathode GaAs

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1	Large enhancement of spin polarization observed b…	↓
2	The Stanford linear accelerator polarized electro…	↓

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1	Large enhancement of spin polarization observed b…	↓
2	The Stanford linear accelerator polarized electro…	↓

Photoemission Properties (Cs/Cs-O Activation)

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1	Thermal emittance and response time measurements …	↓
2	Transverse energy spread of photoelectrons emitte…	↓
3	Mean Transverse Energy Measurement of Negative El…	↓
4	Mean Transverse Energy Measurement of Negative El…	↓
5	Mean Transverse Energy Measurement of Negative El…	↓

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1	Transverse Energy Distribution Measurements for P…	↓

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1	The GaAs spin polarized electron source	↓
2	The GaAs spin polarized electron source	↓
3	Negative electron affinity GaAs: A new source of …	↓
4	Negative electron affinity GaAs: A new source of …	↓
5	Photoemission of spin-polarized electrons from Ga…	↓

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1	Photoemission of spin-polarized electrons from Ga…	↓

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1	The application of semiconductors with negative e…	↓
2	Practical use of III-V compound electron emitters…	↓
3	Practical use of III-V compound electron emitters…	↓
4	Practical use of III-V compound electron emitters…	↓
5	Photoemission from Cesium Oxide Covered GaInAs	↓

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1	The GaAs spin polarized electron source	↓
2	The GaAs spin polarized electron source	↓
3	The GaAs spin polarized electron source	↓
4	The GaAs spin polarized electron source	↓
5	The GaAs spin polarized electron source	↓

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1	The GaAs spin polarized electron source	↓
2	GaAs-Cs: A new type of photoemitter	↓
3	Negative affinity 3–5 photocathodes: Their physic…	↓
4	Negative affinity 3–5 photocathodes: Their physic…	↓
5	Negative affinity 3–5 photocathodes: Their physic…	↓

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1	Negative affinity 3–5 photocathodes: Their physic…	↓
2	Negative electron affinity GaAs: A new source of …	↓
3	Negative affinity 3–5 photocathodes: Their physic…	↓
4	Negative affinity 3–5 photocathodes: Their physic…	↓
5	Negative affinity 3–5 photocathodes: Their physic…	↓

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1	Negative affinity 3–5 photocathodes: Their physic…	↓
2	Photoemission of spin-polarized electrons from Ga…	↓
3	Photoemission from activated gallium arsenide. I.…	↓
4	Photoemission from activated gallium arsenide. I.…	↓

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