The application of semiconductors with negative electron affinity surfaces to electron emission devices

R.U. Martinelli and D.G. Fisher

Details

Attribute Value
Date Published Jan. 1, 1974
Publication Proceedings of the IEEE
DOI 10.1109/proc.1974.9626

Photoemission Properties

A figure with lines showing the QE of the photocathode GaAs
# Material
1 GaAs
2 CsK2Sb
3 Na-K-Sb-Cs
4 Na-K-Sb-Cs
5 S-10
A figure with lines showing the QE of the photocathode S-1
# Material
1 S-1
2 InGaAs
3 InGaAs
4 InGaAs
5 InGaAs
A figure with lines showing the QE of the photocathode InGaAs
# Material
1 InGaAs
2 InGaAs
3 InGaAs
4 InGaAs
5 InGaAs
A figure with lines showing the QE of the photocathode InGaAs
# Material
1 InGaAs
2 InGaAs
3 InGaAs
4 InGaAsP

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Related Photocathodes

CsK2Sb Gallium Arsenide (GaAs) Indium Gallium Arsenside (InGaAs) InGaAsP Na-K-Sb-Cs (S-20) S-1 (Ag-O-Cs) S‐10 (Bi-Ag-O-Cs)